GB/T43493.1一2023《半导体器件功率器件用碳化硅同质外延片缺陷的无损检测识别判据第1部分：缺陷分类》等系列国家标准解读

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Interpretation of GB/T 43493.1-2023， Semiconductor device-Nondestructive recognition criteria ofdefects in silicon carbide homoepitaxial wafer for power devices-Part 1： Classification of defects

LU WeiliFANG YulongWANG Bo LI Shuai WANG Jian HAN Mingrui WANG QihengLI Jiantao

The l3th Research Institute of China Electronics Technology Group Corporation）

Abstract：Inrecentyears，the globaldemand for SiCmaterials hasexploded.Thequalityand performanceofSiCepitaxial wafers，thecore material of power devices，directlydetermine thereliability and service lifeof the devices.Developing national standards forSiCepitaxial wafers，standardizingdefectclassificationanddetection methods forSiCepitaxial wafers， andguidingtheproductionanduseofSiCepitaxial wafers，playanimportantroleinpromoting thehigh-qualitydevelopment of domestic SiCsemiconductor materialsand SiC-based power semiconductordevices.This article interprets threenational standards，includingGB/T43493.1-2023，Semiconductordevice—Non-destructiverecognitioncriteriaofdefects insilicon carbide homoepitaxial waferforpowerdevices-Part1：Clasificationofdefects，andevaluates thekeycontents to help standards usersbetter understand， implement，and enforce them.

Keywords：siliconcarbide;defect;national standards

0 引言

当前，全球半导体产业正处于深度变革，化合物半导体成为产业发展新的关注点，我国应加紧产业布局，抢占发展的主动权。（剩余3703字）