大尺寸 0+MaskITO不良检出改善

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ImprovementofDefectDetection forLarge-sized 0+ MaskITO

XIAO Qiang* LU Lixun ZHOUBafu WU Chengye （Wuhan BOE Optoelectronics Technology Co.，Ltd.）

Abstract：Thisarticle focuses on thekey challengesin improving theyieldof large-sized 0+ maskLCDproducts， specifically the isse of non-repairable OS （open circuit and short circuit）and invisible defects.Byanalyzing the causes of this defect，including the microstructureof materials，fluctuations in manufacturing processes，and limitations in equipment accuracy， this article proposes a comprehensive solution.It involves optimizing the processparameters for the preparationof test equipment in the semiconductorlayer to enhance process stability;integrating advancedonline monitoringand detection technologies to improve the identificationofOSand invisibledefects;and strengthening the quality control system during the production process to ensure that each link meets high standards.These measures have effectively reduced therate ofOSand invisible defects，significantly improved the overallyield of large-sized 0+ mask LCD products，and provided strong support for technological progressand product quality upgrades in the industry.

Keywords： display industry; yield improvement; OS invisible; DOE experimental design method

1 背景与目的

0+M ask产品生产过程中不可维修中GateOSinvisible在良率损失占比较大，Gate层经各种技术参数调试返检出基本都为Gate&Gate或GateCommon

LineShort-ITORemain（ITO残留）不良（小氧化铟锡残留导致）。（剩余4811字）