基于碳化硅生产工艺优化的高性能计算平台设计

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中图分类号：TP3；TQ02 文献标志码：B 文章编码：1672-7274（2025）08-0013-03

Design and Research of High Performance Computing Platform Based on Optimization of Silicon Carbide Production Process

CUI Yuping （Wuwei Vocational and Technical University，Wuwei 733ooo，China）

Abstract： In response to the problems in the production processof silicon carbide， this paper proposes a design scheme based on a high-performance computing platform，and designs a hardware and software architecture that integrates parallelcomputing，cloud computing，edgecomputing，andartificial inteligence technologies.Experiments show that this platform can increase the growth rate of silicon carbide and improve the doping uniformity，providing technical support for the development of the semiconductor industryin China.

Keywords：sliconcarbide;productionprocess;hghperformancecomputingplatform; optimzation; experimentalveriication

0 引言

随着半导体产业的迅猛发展，碳化硅材料因其独特的物理和化学性能，在电力电子、航空航天等领域具有广泛的应用前景1。（剩余4927字）