基于GaAs半导体的汽车射频电子器件技术研究

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中图分类号：U463.6 文献标识码：A 文章编号：1003-8639（2025）07-0132-03

Research on Automotive RF Electronic Device Technology Based on GaAs Semiconductor

Ding Yuehang

（College of Scienceand Engineering，University of Glasgow，Glasgow，UK）

【Abstract】With therapid development of intellgent drivingand vehicle networking technologies，the demand for high-frequency，high-powerRFdevices inautomotive electronicsystemscontinues toescalate.Traditionalsilicon-based semiconductors face bottleneckssuch aslowcarrier mobilityand high thermallossesatmillimeter-wave frequencies， which limit the performance improvement of core modules likeon-board radar and V2X communication.Galliumarsenide （GaAs）materials，with their high electron mobilityand directbandgapcharacteristics，demonstrate significantadvantages in scenarios such as24 GHz/77GHz on-board radar and 5G-V2X communication modules.However，issuessuch as high-temperaturestability，multi-bandcompatibility，andcostcontrolstillconstraintheirlarge-scaleaplication. Therefore，this paper systematically investigates material propertyoptimization，circuit design methods，and system integration techniques forGaAssemiconductors inautomotiveRFelectronicdevices，aiming toestablishahighlyreliable andlow-power consumption design paradigm forautomotiveRFdevices and promote the inovative development of nextgeneration intelligent automotive electronic architectures.

【Key words】 GaAs；RF electronic devices；automotive electronics；semiconductor technology

汽车应用场景的特殊性对器件提出了多重挑战：高温工作环境影响材料载流子迁移效率，多射频模块协同运行加剧电磁干扰风险，复杂振动与湿度变化威胁封装结构完整性。（剩余4078字）