Bi₂S₃/Bi₂O₂Se 异质结光电极的制备与机理研究

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中图分类号：TB332 文献标志码：A 文章编号：2095-2945（2025）24-0068-05

Abstract：Nanomateralshavewideaplicationpotentialinoptics，electronicsandotherfieldsduetotheiruniquesizeeffect，ich morphology，andexcelentsinglecrystalproperties.Thispaperstudiesamethodofpreparingalayerofdibismuthselenideoxide L Bi202Sϵ e） nanosheets on the surface of a dibismuth trisulfide（F 312>： ）nanorod arrayto build a dibismuth trisulfide/dibismuth selenide oxide （Bi2S/B 12O Se）heterojunction，and studiestheaplicationof thisheterostructureinthephotoanodeoxygen evolutionreactionStudies haveshownthattesthesidlectrodematerialsaveexcelentsinglecystalpropei，hichcontributestotetrasprtfpot generated carriers. The photocurrent density of the electrode based on the Bi 2S3/ Bi2OSe heterojunction is increased by 7times and 263 times compared to that of the pure Bi2S3 electrode and the pure BizO2Se electrode，respectively. This is due to the formation of a Van der Waals heterojunction of Bi2S3/B 121 OSeat the interface，which greatly improves the solar absorptionefficiency of the electrode material，improvestspatiocfotogeatedtroeiddusteobatioateoftooleis.

Keywords：heterojunction;photoelectric response;two-dimensional material; nanostructure；nanomaterials

近年来，二维层状纳米材料因其具有独特的物理和化学性质备受研究者的关注。（剩余5330字）