HCl/HNO₃/H₂SO₄ 改性 g-C₃N₄ 的光催化性能研究

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关键词： g-C3N4 ；酸性改性处理；光催化；荧光光谱；带隙中图分类号：0482.31 文献标志码：A 文章编号：2095-2945(2025)14-0088-04

Abstract:g-C3N4werepreparedbythermal polymerizationand treatedwithHCl/HNO/HSO4，whichwaspreparedbycheap urea asprecursor.Studies on photocatalytic performance of g -C3N4 modification by HCI/HNO/HSO ′4 and the obtained products were characterizedbyXRD,SEM,PLandothermethods，andthefactorsafectingitsphotocatalysiswereaalyzed.Theresultsshow that the photocatalytic performance of acid-modified g -C3N4is significantly improved duo to the change of fluorescence intensity andband gap,and the fect of nitric acid modification on the photocatalytic performance is the mostobvious.

Keywords: g-C3N4; acidification; photocatalysis; PL; optical band gap

g-C3N4 作为一种类石墨结构的有机半导体材料，具有良好的高温稳定性和化学稳定性，且其禁带宽度较小,对可见光有较好的效应而成为得到广泛的应用。（剩余8250字）