新型电力电子器件在智能电网中的应用与优化设计

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中图分类号：TN386 文献标志码：A 文章编号：2095-2945（2025）13-0020-04

Abstract：Newpowerelectronicdevicesplayavitalroleinsmartgridsandcansignificantlyimprovethestability，reliability andefciencyofthepowergrid.Withthedevelopmentofsmartgrids，coreequipmentbasedonpowerelectronicstechnology suchas IGBTs，MOSFETs，andSiC devicesare widelyused inscenariossuchastransmisionanddistribution，distributedenergy access，energystoragesystems，andelectricvehiclechargingnetworks.eseevicescanachieveeficientconversionandprecise controlof power，meetingthegridsrequirementsforhighpowerdensity，lowloss，andfastresponse.Intermsofoptiization design，devicetheralmanagementoptiizationmoduleintegrationesignelectromagneticinterferencesuppresionandothr meansimprovetheoverallperformanceof thepowersystem，andtheupgradeof powersemiconductorsandtheapplicationof new materialscan makethepower gridoperation moreeffcientand intellgent，furtherpromoting the developmentof smartgrids.

Keywords：new power electronic device;smart grid;IGBT; MOSFET;SiC device

随着全球能源结构的调整和电力需求的持续增长，智能电网作为新一代电力系统的核心形态，正在逐步取代传统电网。（剩余4497字）