4T/8T像素结构CMOS图像传感器的空间辐照影响及加固技术研究

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DOI：10.16652/j.issn.1004-373x.2026.01.001引用格式：，，，等.4T/8T像素结构CMOS图像传感器的空间辐照影响及加固技术研究[J].现代电子技术，2026，49（1）：

关键词：CMOS图像传感器；电离总剂量效应；位移损伤效应；单粒子效应；抗辐射加固技术；空间辐射中图分类号：TN386-34 文献标识码：A 文章编号：1004-373X（2026）01-0001-07

4T/8T pixel structure CMOS image sensor space radiation progress and reinforcement technology

WANG Tingting1， YANG Xiaoxi1²， JIANG Hao¹， ZHANG Qi1，ZHANG Liang1，² uteofTechnicalPsicsCinsecademyofienesanghiOo83China;2.Uivesityfneseadeyficii

Abstract：Complementarymetal oxidesemiconductor（CMOS）contact image sensor（CIS）isoftenused to detect the directionofbeaconlightintheacquisition，trackingandpointing（ATP）systeminspaceopticalcommunication.Spaceirradiation willaffectheworking performanceandservice lifeof CMOSimagesensor.Theresearchonthe influence principleof space iradiationondevicesandtheanti-iadiationreinforcementtechologycanimprovethepracticalengineeringapplicationability of CMOS image sensors.The4T/8T（transistor）pixel structureCMOS image sensor is widelyused inthecurentATP system.In this paper，theresearchesultsof iadiationtestandtheanti-iradiationreinforcementtechnologyof4T/8TpixelstructureCISat homeandabroadaresummarizedinthetheeaspectsoftotalionizationdoseefect，displacementdamageefectandsingleevent efect.AreinforcementsingleeventefecttechnologyforCISof8Tpixelstructureisproposed.Thesingleeventupsetffectof CMOS image sensorandFPGAiscoreced without poweroffandrestart.Inadition，the shutdownandrestartof CMOS image sensorduring singleeventlatch-upisrealized，andtheanti-radiationefect performanceofCMOS image sensoris improved.

Keywords：CMOSimagesensor;totalionizationdoseeffct;displacementdamageeect;singleeventeect;anti-irraation reinforcement technology;spaceirradiation

0 引言

在空间光通信领域，由于激光的发散角小、方向性强，星间、星地终端之间存在相对运动和链路扰动，且卫星平台也处于振动中。（剩余12860字）