一种双波段GaN高效率功率放大器

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中图分类号：TN711-34 文献标识码：A 文章编号：1004-373X（2025）20-0045-06

Abstract：Withtherapid developmentof wireless communication technology，thedemand for multi-band communication systemshasbeenincreasing inrecentyears.Onthisbasis，adesign methodofdual-bandpoweramplifierisproposed，andaGaN basedP/Sbanddualfrequencypoweramplifierisdesigned.Inthisamplifier，inter-stage matchingnetwork（ISMN）andinput matchingnetwork （IMN）areused torealizedual-band functionof poweramplifier.Theoutput matching network（OMN） is designedbymeansofthetheoryofcapacitorself-resonance，whichprovidesashortcireuitpointforthepoweramplifiersignal， thusachievingthestableoperationof thecircuitinthedual-band.Thesimulationresultsshowthatwhenthefrequencyis theP band，the small-signal gain of the amplifier is greater than 29.4 dB，the saturation output power （ Psat） is greater than 40.2 dBm， andthepoweraditionaleficiency（PAE）is62%to6.2%;whenthefrequencyisSband，theamplifierhasasmalsignal gain greater than 29.7 dB，a saturation output power of more than 39.1 dBm，anda PAE of 52.3% to 66.3%

Keywords：GaN; poweramplifier;dual-band;inter-stage matching network;input matching network; power amplifier signal

0 引言

随着无线通信技术的飞速发展和应用需求的多样化，近年来，对多频段通信系统的需求日益增加。（剩余7545字）