IGBT自激电磁振动信号的压电薄膜传感与检测

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中图分类号：TM930.12 文献标志码：A DOI：10.16385/j.cnki.issn.1004-4523.202508076

Experimental study on the detection of IGBT self-excited electromagnetic vibration signal using a piezoelectric film sensor

HE Yunze1²，ZHANG Jie'，LI Qiying'，PING Yang'，GUO Dixin³，HE Hongying' （1.College of Electrical and Information Engineering，Hunan University，Changsha 410082，China; 2.Shenzhen Research Institute，Hunan University，Shenzhen 518ooo，China; 3.CollgeofElectricalandPower Engineering，Taiyuan Universityof Technology，Taiyuan O30024，China）

Abstract：Thisstudyexperimentallinvestigatestheself-excitedelectroagneticvbratio（SEsignalseneratedduringtetuf processf insulatedgatebipolar transistors（GBs）usingpezoelectricthinfisensors，analyzingtheircharacteisticsunderaringtest conditionsadteiroelationithproagaopathsndiitparametesApusedtestplatfoasosctedtoschooslycie IGBTelectricalparametesndEMsigalsiatepuserggeredswigproessndnosiloopeComparativeaalysisofsigal propagation pathsunderdiferent sensorplacementsandcouplingagentaplications deterinedtheoptial detection method，involvinga couplingagentapidtotevescapsulatioellubsequlytissdyadteifreqcomaaractesofelf excitedelectromagneticvibrationsignalsfromIGBdevicesunderdiferentoperatingconditionsbyvaryingthetumofcurrtandbus voltage.Teresultsdemonstratethatbothteamplitudeandenergyoftheself-excitedelectromagneticvibrationsignalsdetectedbythe piezoelectricthinfssoretposiieoelatiositheuuretadusvolae.Furtrethefreuecypeaksofte signals measured by the piezoelectric thin film sensor were primarily concentrated around 35，57 and 135kHz Additionally，an over-gatevoltagefaulttestwasconductedtoexaminetecharacteristicsofSEMVsignalsunderabnoalconditios.Acomparativeevaluationwith piezoelectriceraiccousticisisesosdemostratedcosistetSsigaleeesposetresbutdstictspetrastrbtio andsensivitycharacteristics，ighlightingthpiezoelectrictinfisesorsadvantagesinlow-frequecydetetionandstalatio adaptability.ThesefindingsprovideafoundationforbroadbandSEMVsignalacquisitionandonditionmontoringoptimizationinGBT devices.

Keywords：self-excitedelectromagneticvibration;nsulatedgatebipolartransisitor;piezoelectricfilm;vibrationmotoring

近年来，智能电网、轨道交通、新能源发电、电动汽车及特种电源等领域迅速发展，绝缘栅双极性晶体管（insulatedgatebipolartransistor，IGBT）器件作为这些领域电能变换与控制的核心单元，其运行的安全与可靠性直接关系到整个系统的稳定与效率[1-4]。（剩余15138字）