Ge/ZnS光子晶体的制备及其红外-透波性能

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中图分类号：TB34 文献标志码：A DOI：10.13338/j.issn.1006-8341.2025.05.005

AbstractInorder to solve theproblem lowcompatibility infrared stealth radar transmission performance Ge/ZnS photonic crystal，the Ge/ZnS photonic crystal structure was simulated by TFCalc simulation stware.By changing the thickness period the film，the infrared emissivity 3～5μm b can be realized as low as O.Oo5 9.The effects electron beam current output voltage on the deposition properties Ge ZnS monolayer films were investigated by vacuum evaporation technology. On this basis， Ge/ZnS photonic crystals were prepared by using better parameters according to the simulation results.The results show that the deposition performance Ge ZnS monolayer films is better when the electron beam current is 90mA the output voltage is 40% 220V ，respectively. The emissivity Ge/ZnS photonic crystal prepared by this parameter is O.055 at 3～5μm b. The dielectric constant in the range 12.4～18GHz is between 3.34～3.89 ， the dielectric loss tangent is between 0.0131～0.1208. At this time，the compatibility infrared stealth wave transmission performance is high.

Keywordsphotonic crystal；stealth technology；vacuum evaporation；infrared emissivity；wave transmissionperformance

0 引言

隐身技术是通过改变目标被探测到的信息，来降低探测系统发现、识别目标的概率[1]。（剩余14738字）