新型抑制剂AMT对Cu/Ru/TEOS去除速率选择性的影响

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关键词：Ru；化学机械抛光（CMP）；AMT；去除速率选择比；碟形坑；蚀坑

中图分类号：TN305.2；TQ421.4

文献标识码：A

DOI：10.14106/j.cnki.1001-2028.2025.1520

引用格式：尤羽菲， 马慧萍， 周建伟， 等. 新型抑制剂AMT对Cu/Ru/TEOS去除速率选择性的影响 [J]. 电子元件与材料， 2025， 44（3）： 331-337.

Reference format： YOU Yufei， MA Huiping， ZHOU Jianwei， et al. Effect of novel inhibitor AMT on the selectivity of Cu/Ru/TEOS removal rate [J]. Electronic Components and Materials， 2025， 44（3）： 331-337.

Effect of novel inhibitor AMT on the selectivity of Cu/Ru/TEOS

removal rate

YOU Yufei 1，2， MA Huiping 1，2， ZHOU Jianwei 1，2， LUO Chong 1，2

（1. School of Electronic Information Engineering， Hebei University of Technology， Tianjin 300130， China; 2. Tianjin

Key Laboratory of Electronic Materials and Devices， Tianjin 300130， China）

Abstract： For Ru barrier layer chemical mechanical polishing， the main challenges are low Ru removal rate and difficulty in achieving a good Cu/Ru/TEOS removal rate selectivity ratio. In order to solve the above problems， a new inhibitor AMT was introduced based on the KIO 4-K 2S 2O 8dual oxidant system to enhance the Ru removal rate and surface quality and improve the Cu/Ru/TEOS selectivity ratio. The polishing experiment confirmed that the removal rate selectivity of Cu/Ru/TEOS could be adjusted by introducing AMT into the KIO4-K2S2O8 system. The surface quality of Ru before and after the introduction of AMT was compared using AFM testing， and the result showed that the surface roughness of Cu/Ru was improved by the introduction of AMT in the KIO4-K2S2O8 system. Dishing pit and etching pit testing confirmed that the introduction of AMT had a corrective effect on the dishing pits and etching pits， and the role of AMT in the CMP process of the Ru barrier layer was revealed. The final Cu/Ru/TEOS rate selectivity ratio reaches 1∶1.3∶1.7， and at this time， the correction effect of dishing pits and etching pits are good， with correction values of 54.4 nm and 49.4 nm， respectively.

Keywords：  Ru; chemical mechanical polishing （CMP）; AMT; removal rate selectivity ratio; dishing pit; etching pit

随着集成电路（IC）特征尺寸的进一步缩小，传统铜（Cu）互连阻挡层钽（Ta）和氮化钽（TaN）难以满足微电子技术的要求 [1-3]。（剩余10199字）