具有自偏置MOS空穴抽取通路和阻塞结的IGBT

打开文本图片集

关键词：IGBT；阻断电压；关断损耗；电场；空穴抽取

中图分类号： TN322.8

文献标识码：A

DOI：10.14106/j.cnki.1001-2028.2025.1424

引用格式：曾荣周，雷盛长，吴振珲，等. 具有自偏置MOS空穴抽取通路和阻塞结的IGBT [J]. 电子元件与材料，2025， 44（3）：259-264.

Reference format： ZENG Rongzhou，LEI Shengchang，WU Zhenhui，et al. IGBT with self-biased MOS hole extraction pathways and blocking junction [J]. Electronic Components and Materials， 2025， 44（3）：259-264.

IGBT with self-biased MOS hole extraction pathways and blocking

junction

ZENG Rongzhou 1，LEI Shengchang 1， WU Zhenhui 1， LIAO Linyuan 1， LI Junhong 2

（1.College of Rail Transit， Hunan University of Technology， Zhuzhou 412007， Hunan Province， China; 2. State Key

Laboratory of Electronic Thin Films and Integrated Devices，University of Electronic Science and Technology of China，

Chengdu 610054，China ）

Abstract： To reduce the turn-off loss （E OFF） and improve the compromise relationship between the turn-on voltage （V ON） and the E OFFof Insulated Gate Bipolar Transistor （IGBT）， a blocking junction IGBT with self-biased MOS hole extraction path （APBJ-IGBT） was proposed based on the carrier storage IGBT （CSTBT） and blocking junction IGBT. The self-biased hole extraction path is formed by a low-doped P-type （HP） region between two trench gates. In the on-state， the HP region is depleted by trench gates and the hole path is pinched off， resulting in high injection efficiency and low V ON. In the off-state， the P drift region is shorted to the emitter through the HP region. Consequently， the holes stored in the P drift region can be rapidly transmitted to the emitter through the HP region and the E OFFis reduced. Simulation results show that the blocking voltage of APBJ-IGBT is increased by 17.3% compared with that of the traditional CSTBT. Under the conditions of 1.063 V in V ONand 100 A/cm 2in collector current， the E OFFof the APBJ-IGBT is 72.3% lower than that of CSTBT， 66.5% lower than that of the conventional blocking junction IGBT， and 25.3% lower than that of the CSTBT with HP. Moreover， the trade-off relationship of V ON-E OFFof the APBJ-IGBT is improved greatly.

Keywords： IGBT；breakdown voltage；turn-off loss；electric field；hole extraction

绝缘栅双极型晶体管（IGBT）是电力电子系统中应用的主流功率器件之一，广泛应用于工业控制、轨道交通、家电产品等领域 [1-2]。（剩余8149字）