基于BCD工艺的中低压全隔离片上DDSCR设计方法

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中图分类号:G461 DOI:10.20042/j.cnki.1009-4903.2025.03.021

Abstract:Astheimportanceofectrostaticdscharge(ESD)protectioncapabiesginsincreasingmarketrecognitiontaditioal on-chipESDdevicesare progressvelyfailing tomeet the growing ESDprotectionrequirements forports.Toenhance product competivenessithasbecomeimpeativetoimproetepeformanceofohipDvicesparticularlyintomotiveelectroics. Aseries ofcustomized requirements foron-chipESDprotection inaplicationssuchas in-vehiclebussystems,which demand substrate-directionaewittandapabi,ecesiatestatsuchvicesposssfullsoaionfromtbstrateAdreing theseportprotectionrequirements,thispaperproposesauniversalmodificationapproachbasedonstandarddevicesinBC(Bipolar CMOS-DMOS)processes.ismethodologyenablesdesigners todevelopfulyisolatedDualDirectinalSilicon-Controledetfier (DDSCR) structures that comply with port application requirements using standard device structure.

Key words: DDSCR; ESD; BCD; Bus protection

0 引信

随着集成电路的发展,ESD防护能力逐渐成为产品竞争力的重要部分,尤其是在汽车电子领域,以车载总线收发器为代表的车规级芯片,其静电枪接触放电能力成为评估可靠性的重要标准1。(剩余3854字)

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