基于直流磁控溅射VO2薄膜的高效近红外光电探测器
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关键词：直流磁控溅射; VO2 ；金属-绝缘体相变；近红外光；光电探测器中图分类号：0482.31；0472.3 文献标识码：ADOI：10.37188/CJL.20250148 CSTR：32170.14.CJL.20250148
Abstract：Vanadium dioxide （VO2）. a semiconductor material with a narrow bandgap and reversible metal-insulator transition （MIT）characteristics，exhibits promising potential for near-infrared（NIR）photodetection.In this work，monoclinic VO2 （M1）thin films were successfully synthesized on p-type silicon substrates using DC magnetronsputeringofametalicvanadium target followed bya post-annealing process.Theresults revealthattheas-prepared films possessuniform and dense granular morphology andexhibit preferentially（O11）-oriented VO2（M1） phase at room temperature，transitioning to rutile-phase VO2 （R）when heated to 70°C .Subsequently，a metal-semiconductor-metal（MSM）structured NIR photodetector（ Ag/VO2/Ag ）wasconstructed.Underabiasvoltage of1.5V and 980 nm NIR ilumination，the device demonstrates outstanding photoresponse performance at room temperature. When the optical power density is ，theresponsivity and specific detectivityreach peak valuesof 109.06 mA/W and of 2. 33×1010 Jones，respectively，accompanied by rise/decay time of 0.256/o.427 s. Temperature-dependent analysis shows a gradual enhancement in responsivitywith increasing temperature between 20-80℃， primarily attributed to the enhanced carrier concentration induced by the M1⟶R phase transition of VO 12 .Furthermore，the device maintains broadband photoresponse across the visible-NIR spectral range（455-1100 nm）.
Key Words：DC magnetron sputtering; VO2 ;metal-insulator phase transition；near-infrared light；photodetectors
1引言
近红外光 （NIR，0.75～3μm， 因其低大气吸收损耗、宽光兼容性、低光子能量以及深层生物组织穿透能力等一些独特的物理性质，驱动着近红外光电子器件向多功能化方向发展[12]。（剩余18438字）
