谐振周期增益有源区 AlxGa1−xAs 间隔层对 940nm垂直腔面发射激光器性能的影响

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关键词：垂直腔面发射激光器；高输出功率；谐振周期增益有源区； AlxGa1-xAs 间隔层 中图分类号：TN248.4 文献标识码：A DOI：10.37188/CJL.20250151 CSTR：32170.14.CJL.20250151

Abstract：The resonant periodic gain（RPG） active region with diferent Al composition in AlxGa1-xAs spacer layers wasdesignedusingPICS3Dsimulationsoftwaretoinvestigatethephotoelectriccharacteristicsofa940nmverticalcavity surface emiting laser（VCSEL），aiming toachieve high outputpowerand high powerconversion eficiency.Simulation results indicate that the peak output power of the RPG VCSEL reaches 24.32 mW，and the peak power conversion efciencyreaches51.7%whentheAlcompositionof thespacerlayerisO.1.The transportpropertiesofcarriers in the activeregionoftheRPG VCSELs were investigated through analysis oftheband structureof the spacerlayer.The results show thatadjusting the Alcomposition canregulate its band structure and control theradiationrecombination probability.This effctivelyreduces the accumulationof electronand holeinthe spacerlayer，therebyreducing nonradiative recombination.This study provides theoretical guidanceanddata support for selecting spacerlayer materials in strain compensated quantum well RPG active regions.

Key Words：vertical cavity surface emiting laser；high output power；resonant periodic gainactive regions; AlGal_xAs spacerlayer

1引言

垂直腔面发射激光器（Verticalcavitysurfaceemittinglaser，VCSEL）具有低阀值电流、低功耗和低制造成本等优势，被广泛应用在光通信、光电探测、消费电子和3D传感等领域-5]。（剩余12432字）