电场驱动少层黑磷激子近红外发光器件

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中图分类号：TN312.8 文献标识码：ADOI：10.37188/CJL.20250099 CSTR：32170.14.CJL.20250099

Abstract：Two-dimensional（2D）semiconductors，characterizedbyatomic-layer thicknessand vander Waals integrationcapability，exhibitexciton-dominatedlumnescenceatroomtemperature，makingthemfrontiermaterialsformicro/- nooptoelectronicdevices.Electricallydrivenexciton light-emitingdevicesarecrucial forexploringnovelluminescent physicsandadvancing integratedoptoelectronicsapplications.Currently，exciton-basedlight-emitingdevices in2Dsemiconductors primarilyfocusonthevisible spectrum，whilethefabricationof near-infrared（communicationband）electroluminescentdevicesremainschallnging.This studydemonstrateselectric-field-modulatedexcitonicnear-infraredemission inbilayerandtrilayerblackphosphorus，andconstructs injection-freeexcitonlight-emitingdevicesdrivenbylateral electricfields.Thesedevicesoperateatwavelengthsaround115Onmand150Onm，respectively.Therealizationof electricallydrivennear-infrared excitondevicesusing few-layerblack phosphorus expandsthespectralrangeof2Dmaterialbased electroluminescent devices，providing new materials and pathways for near-infrared light-emiting devices.

KeyWords：two-dimensional materials；black phosphorus；exciton；near-infrared;light-emiting diodes

1引言

光电集成芯片的发展对光电器件的小型化与集成兼容性提出了新的需求。（剩余14422字）