氧化X射线探测器

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关键词：氧化镓；X射线探测器；结晶性；薄膜；光电转换机制中图分类号：TL816.1 文献标识码：ADOI：10.37188/CJL.20250136 CSTR：32170.14.CJL.20250136

Gallium Oxide X-rayDetectors

ZHANG Zhipeng，CHEN Jun* （SchoolofElectronicsandInformationTechnology，SunYat-sen University，Guangzhou51O275，China） *CorrespondingAuthor，E-mail：stscjun@mail.sysu.edu.cn

Abstract：Gallium oxide（ Ga2O3 ）hasthe advantages of high absorption efficiency forlow-energyX-rays，high operating electric field，lowdark current and highphysicochemical stability，and isone ofthe importantcandidate materials fordirect-conversion X-raydetectors.This paper reviews the progress of X-ray detection characteristics of Ga2O3 and its device research from theperspectives of material，device structure，photoelectric conversion mechanism，and device applications.At present，the X-ray detectors using amorphous Ga2O3 thin films，polycrystalline（includingmicrocrystalline and nanocrystalline）Ga thinfilms，highlyorientedepitaxial single-crystal G thin films，single-crystal Ga2O3 bulks，and single-crystal Ga2O3 microwires have been fabricated and their detection performances have been studied.The device structures employed include metalsemiconductor-metal（MSM），Schottky junctions，heterojunctions，and vacum structures.Various photoelectric conversion mechanisms，such as photoconductive gain，avalanche gain，and electron bombardment induced photoconductivity effect，have been proposed.In terms of device applications，the applications of Ga2O3 X-ray detectors in X-ray dosimeters，X-ray imaging，and wearable X-ray sensors have been displayed. Based on the above research progress，this paper further looks forward to the future development direction of Ga2O3 based X 1 ray detectors.

Key words：gallium oxide；X-raydetectors；crystallinity；thin fim；photoelectric conversion mechanism

1引言

X射线探测器是X射线探测和成像的核心器件，在医疗成像、工业检测、安全检查和科学研究等领域具有重要应用]。（剩余31768字）