高亮度 1060nm HiBBEE锥形半导体激光器

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关键词：锥形半导体激光器；垂直宽区边发射激光器；高亮度；光束质量中图分类号：TN248.4 文献标识码：ADOI：10.37188/CJL.20250056 CSTR：32170.14.CJL.20250056

1 High-brightness HiBBEE Tapered Semiconductor Laser

LIU Xiang 1，2 ，WU Chengkun 1，2 ，XUE Xiaoe"，MIAH Md Jarez³，WANG Lijie4，SU Jiaxin 5 GAO Xiang1，²，SANA Fatima1²， TIAN Sicongl，BIMBERG Dieter1，6* （1.BimbergChinese-German CenterforGreenPhotonics&StateKeyLaboratoryofLuminescenceScienceandTechnology， ChangchunInstituteofOptics，FineMechanicsandPhysics，ChineseAcademyofSciences，Changchun13oo33，China;

2.UniversityofChineseAcademyofSciences，Beijing1Ooo49，China;

3.InstituteofInformationandCommunication Technology，Bangladesh UniversityofEngineeringand Technology， Dhaka1205，Bangladesh;

4.Jlight Semiconductor TechnologyCo.Ltd，Changchun130o31，China;

5.DahengOptoelectronicTechnologyStrategyResearchCenter，hangchunInstituteofOptics，ineMechanicsandPhics， ChineseAcademyofSciences，Changchun130033，China;

6.CenterofNanophotonics，InstituteofSolidStatePhysics，TechnischeUniversitatBerlin，Berlin D -10623，Germany） *Corresponding Authors，E-mail：xxe@ciomp.ac.cn；tiansicong@ciomp.ac.cn；bimberg@physik.tu-berlin.de

Abstract：To achieve high-brightness and low divergence angle output for a1 O6O nm semiconductor laser，a high-brightness vertical broad-area edge-emiting（HiBBEE）epitaxial wafer was utilized，and a HiBBEE tapered semiconductor laser was designed and successfully fabricated. A 7μm narrow ridge waveguide is designed to achieve single-mode output and a 100μm tapered waveguide section at the rear facet for power amplification.Ata driving current of 1.5A ，the laser achieves a brightness of up to 25MW⋅cm-2⋅sr-1 .The device exhibits a vertical divergence angle of 8. 0∘ due to the HiBBEE structure.This laser has significant applications in the eye-safety Lidar application.

KeyWords：tapered semiconductor laser；HiBBEE；high-brightness；beam quality

1引言

高亮度 1060nm 波长半导体激光器作为重要光源在多领域具有广泛应用价值。（剩余12295字）