基于硫氰酸亚铜空穴注人层的量子点发光二极管的性能优化研究

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关键词：硫氰酸亚铜；量子点发光二极管；空穴注入层；束缚电荷；交流驱动中图分类号：TN312.8 文献标识码：ADOI：10.37188/CJL.20250039 CSTR：32170.14.CJL.20250039

Performance Optimization of Solution-processed QLEDs with CuSCN Hole Injection Layer

LIAOMingyue，HEMin，CHENPing*，ZHANGQiaoming，LEIYanlian* （SchoolofPhysical ScienceandTechnology，ChongqingKeyLabofMicro&Nano StructureOptoelectronics， Southwest University，Chongqing40o715，China） Corresponding Authors，E-mail：pingchen@swu.edu.cn；yllei@swu.edu.cn

Abstract： Quantum dot light-emiting diodes（QLEDs）are promising for future display and lighting technologies due to their excellnt optical propertiesand ease of fabrication．However，traditional hole injection materials like PEDOT：PSS limit QLED performance.This study explores copper thiocyanate（CuSCN）as the hole injection layer， paired with CdSe/ZnS green quantum dots and various hole transport layers （HTLs）such as PVK and Poly-TPD.We assessed the optoelectronic properties of these devices under both alternating current（AC）and direct current（DC） conditions.Our results reveal that the energy level barrer between CuSCN andPVK leads to charge trapping，which adverselyaffects performance.Incontrast，Poly-TPD，withits higherhole mobilityandshallowerHOMOenergylevel，alleviates charge trapping，significantlyenhancing brightnessandcurrenteficiency topeakvaluesof32O75cd/m2 and15.6cd/A，respectively.This research provides insights into thecharge trapping mechanismatthe CuSCN/HTL interface，highlighting CuSCN as a viable alternative to PEDOT：PSS for improving QLED efficiency.

KeyWords：copper thiocyanate（CuSCN）；quantum dot light-emiting diodes（QLEDs）；hole injection；trapped charge；alternating current

量子点发光二极管（Quantumdotlight-emit-tingdiode，简写为QLED）因其狭窄的发射带宽、高发光效率、可调发射波长和卓越的光稳定性，成为下一代高质量显示器和固态照明的理想候选者[-3]。（剩余14168字）