通过壳层掺杂工程改善 CuInS₂/ZnS 近红外量子点发光二极管性能

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Improving Performance of CuInS2/ZnS Near-infrared QLED by Shell Doping Engineering

CHEN Zhuo 1 ，CHENYiming1，ZHANGQianqian1，LIU Zhenyang1，WANGDawei 2 ，LI Xu1*

（1.HebeiKeyLaboratoryofOptic-ElectronicInformationandMaterials，CollegeofPhysicsScienceandTechnology， Hebei University，Baoding O71002，China;

2.HebeiKeyLaboratoryofSemiconductorLightingandDisplayCriticalMaterials，Hebei LedphorOptoelectronics TechnologyCo.，LTD.，BaodingO71000，China）

Abstract：Near-infrared CuInS2（CIS） based quantum dots（QDs） exhibit superior biocompatibilityand environmental friendlinesscompared to traditionalnear-infrared cadmium-based（CdSe）and lead-based（PbS）QDsdueto their absence of heavy metal elements.However，their low photoluminescence quantum yield （PLQY）and poor stability limit their practical applications.While ZnS shellcoating improves the PLQYand stabilityof CIS QDs，CIS/ ZnSQDsexhibit substantial blueshifts inphotoluminescence（PL）peak positions compared to thoseof intrinsic CIS QDs.Additionally，theinterfacial alloying inCIS/ZnScore/shellstructurescauses significantblueshifts inelctroluminescence（EL）peak positions of quantum dot light-emitting diodes（QLEDs）relative to their PL peaks.This study develops a synthetic approach combining rigid shellstructures with aluminum-doped shells，which reduces the photoluminescence （PL） blue shifts in CIS/ZnS quantum dots compared to intrinsic CIS QDs. By incorporating 50% （20 Al/Znmolar ratio of aluminum isopropoxide （ Al（IPA）3 ），we successfully constructed CIS/Al-ZnS（CIS/AZS） core/ shell QDs，which mitigate theELblueshifts inQLEDscompared tothePLandbalancecarier injection.The experimental results show that the CIS/AZS QLEDsachieve a 7nm reduction EL peak blue shifts（emission at 963nm ），apeak external quantum efficiency of 2.61% ，and an 80% enhanced device lifetime.This research provides a solution to address EL blue shifts relative toPL in CIS/ZnS QDs，preserving more valuable near-infrared emisionof near-infrared QLEDs.

KeyWords：CIS/ZnS quantum dots；electroluminescent devices；Al doping;near infrared

1引言

量子点（QDs）凭借其独特的电学与光学性质，在量子点发光二极管（QLED）3以及生物医学标记[45等基础研究与技术应用领域成为当今研究热点8]。（剩余16617字）