基于N-苯基马来酰亚胺改性的量子点光刻胶制备色转换像素化薄膜

打开文本图片集

中图分类号：0482.31 文献标识码：ADOI：10.37188/CJL.20240317 CSTR：32170.14.CJL.20240317

Quantum Dot Photoresists for Pixelated Color Conversion Films BasedonN-PhenylmaleimideModification

JIANG Borui¹，SONG Boxiang'，CHEN Enguo ，LUO Jiajun"， TANG Jiang1 （1.WuhanNationalLaboratoryforOptoelectronics（WNLO），Huazhong UniversityofScienceandTechnology（HUST）， Wuhan430074，China; 2.CollegeofPhysicsand Information Engineering，Fuzhou University，Fuzhou 35o1o8，China; 3.FujianScience&TechnologyInnovationLaboratoryforOptoelectronicInformationofChina（MinduInnovationLaboratory）， Fuzhou 350108，China） Corresponding Authors，E-mail：ceg@fzu.edu.cnj； luojiajun@hust.edu.cn；tang@mail.hust.edu.cn

Abstract：Photolithographyisareliable methodforfabricating pixelatedcolorconversionfilms in Micro-LEDs，butit faces chalenges related to thecompatibilityofquantumdots（QDs）with photoresists.This paperdevelops aquantum dotcompatible photoresistby modifying acrylicresinwithN-phenylmaleimide（NPMI）sidechains.TheCObondsonthe sidechain groups form coordination bonds with quantum dots，passivating surface defects and improving the dispersion of quantumdots.This enhances the photoluminescence quantum yield（PLQY）of the photoresist solution，reaching 76. 1 % （2 for red and 4 3 . 4 % for green.Even after fabricating the color conversion films，the passivation effect persists，with PLQY values of 6 6 . 4 % forgreenand 36.4% for red.The minimum pixel size achieved was arectangular arrayof 1 0 μm x 1 0 μm .Theresin sidechain modification approach inthis study provides guidance for developing QD-compatible photoresistsand offers asimpleand viable solution for the commercialization offull-color Micro-LEDapplications.

Keywords：quantum dot photoresist；color conversion;resin modification；pixelation

1引言

微型发光二极管（Micro-LED）作为新兴显示技术，与液晶显示屏（LCD）和有机发光二极管（OLED）等传统显示技术相比，具有诸多优势：低能耗、高亮度、高寿命、超高分辨率、响应速度极快等[6]。（剩余14098字）