从单晶MgZnO到非晶Ga2O3:深紫外光电探测器的发展和选择

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关键词：日盲紫外；光电探测器；镁锌氧；氧化镓；非晶中图分类号：0482.31；TN366 文献标识码：ADOI：10.37188/CJL.20240266 CSTR：32170.14.CJL.20240266

Deep UV Detection： from Single-crystalline MgZnO to Amorphous

LIANG Huili ， ZHU Rui，DU Xiaolong1²，MEI Zengxia （1.SongshanLakeMaterialsLaboratory，Dongguan523808，China; 2.InstituteofPhysics，ChineseAcademyofSciences，Beijing1Oo19o，China） *CorrespondingAuthors，E-mail：hlliang@iphy.ac.cn；zxmei@iphy.ac.cn

Abstract：Wide bandgap semiconductors have great potential for the development of compact solar-blind ultraviolet detectors without filters.This article summarizes the research progress of deep ultraviolet photodetectors using widebandgap oxide semiconductors including MgZnO and amorphous G （a-G ）thinfilms.Ithasbeenfound that the photoresponse performance of a- thin film iscomparable or even better than that of crystalline thin films.Numerous results demonstrate that oxygen vacancy（ ）defectsplaya crucial roleindevice performance. Basedontheeffectivemodulationof defects，high performance solar-blind ultravioletphotodetectorscanbe successfullyachieved.Inaddition，thepersistent photoconductivity effect，which isusuallyaccompaniedbythepresenceof defects in oxide materials，provides a new perspective for the development of optoelectronic synaptic devices in deep ultravioletrange.Finall，abrief discusson is provided concerning theabove research progress as wel as someunsolved issues.These advancements are expected to promote the industrial application of widebandgap oxide semiconductor materials，especially a ，in deep ultraviolet detection in the future.

Keywords：solar-blind ultraviolet;photodetector; M gZ n 0 ： ;amorphous

1引言

日盲紫外辐射位于 2 2 0～2 8 0 n m ，这一波段的太阳光在穿过大气层时会被臭氧层强烈吸收，在近地大气中几乎不存在。（剩余24449字）