稀土掺杂金属氧化物薄膜晶体管研究进展

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关键词：金属氧化物薄膜晶体管；稀土元素；迁移率；稳定性中图分类号：TN321.5；0482.31 文献标识码：ADOI：10.37188/CJL.20240268 CSTR：32170.14.CJL.20240268

Research Progresson Rare Earth Doped Metal Oxide ThinFilm Transistors

HUANGXianglan，PENG Junbiao* （StateKeyLaboratoryofLuminescentMaterialsandDevices，outhChinaUniversityofTechnology，Guangzhou564，hina） *Corresponding Author，E-mail：psjbpeng@scut.edu.cn

Abstract：Metaloxidethin filmtransistors（MOTFTs）have greatpotentialforaplicationinlarge-sizedorganic lightemitingdisplaydriverbackplanesduetotheirhighcariermobilityandgoodelectricalstability.Inadition，thefabrication processs ofMOTFTsarecompatible withamorphous siliconthinfilmtransistors’，resulting intheirlowermanufacturingcostsandstrong marketadvantages.However，thetrade-offbetweenmobilityandstabilitywhicharethekeyindicators formeasuring MOTFTslimits their high-endappications.Therefore，developing MOTFTsthatcombinehighmobility with high stability hasbecomearesearch hotspot and industrycompetition focus.Numerous studies indicate thatrareearth （ R E ） doped oxidesemiconductor materials is promising for achieving this goal.This paperfocuses on reviewing the design of R E dopedoxidematerials thatachieveboth high mobilityandhigh stability，as wellasthecharacteristic indicators that MOTFTs have reached，and discusses the changes and development potential of R E doped MOTFTs（ R E -MOTFTs）.

Keywords：metal oxide thin film transistors；rare earth；mobility；stability

1引言

数字化时代的发展离不开显示技术。（剩余32336字）