Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode

打开文本图片集

（1.21oo96， 2.Engineering，SoutheastUniversity，Nanjing21Oo96，） （204 Corresponding Authors，E-mail：wanglifeng@seu.edu.cn; xdhuang@seu.edu.cn

Abstract：Rectifying circuit，as a crucial component for converting alternating current into direct current， plays a pivotalrole in energy harvesting microsystems.Traditional silicon-based orgermanium-based rectifierdiodes hinder system integration due to their specific manufacturing processes.Conversely，metal oxide diodes， withtheir simple fabrication techniques，er advantages for system integration.The oxygen vacancydefect oxide semiconductor willgreatly afectthe electrical performance thedevice，so the performance the diode canbe effectively controlled by adjusting the oxygen vacancy concentration. This study centers on optimizing the performance diodes bymodulating theoxygen vacancyconcentration within InGaZnO films through control oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density ，with a rectification ratio ，efficiently rectifying input sine signals with 1k H z frequency and5 V magnitude.These results demonstrate its potential in energy conversion and management.Byadjusting theoxygen vacancy，amethodology is provided foroptimizing theperformance rectifying diodes.

KeyWords：InGaZnO；Schottky barrier diode；oxygen vacancy；rectifying performance CLC number：TN311.7 Document code：A DOI：10.37188/CJL.20240265 CSTR：32170.14.CJL.20240265

氧空位对非晶InGaZnO基肖特基势垒二极管性能的影响

贾斌'，童晓闻'，韩子康¹，秦明¹，王立峰²*，黄晓东1*（1.东南大学集成电路学院，江苏南京；2.东南大学电子科学与工程学院，江苏南京）

摘要：整流电路作为交流转换直流的关键组件，在能量收集微系统中发挥着关键作用。（剩余19913字）