不同电极材料AIN基MSM紫外探测器设计与仿真

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中图分类号：TN23 文献标志码：A

Abstract：Metal-semiconductor-metal （MSM）ultraviolet（UV）detectors are widely employed in applicationssuch as UV anti-virus，optical fiber communication，missile tracking，and aerospace technologies. This study presents an MSM UV detector utilizing aluminum nitride （AlN），focusing on performance parameters including photocurrent，dark current，responsivity，photoelectric response time，andexternal quantum effciency.These parameters were evaluated using APSYS simulation software to compare the efects of various metal electrodematerials（Al-Al，Ni-Ni，Ni-Al）.Simulationresultsrevealedthatvariations inmetal work functions ledtotheformationofan internal built-inelectric fieldinthe asymmetricNi-Aldevices.This field facilitated the spatial separation of photo-generated carriers at the electrode contact surfaces，significantly affecting the optoelectronic properties of the device.Notably，asymmetric Ni-Al MSM devices exhibited a 37% increase in steady - state current response and a 10% decrease in relaxation time compared to symmetric Ni-Ni devices.Additionally，the asymmetric electrode configurations generated abundant photo-generated carriers， most of which successfully surmount the Schottky barrier at metal-semiconductor interfaces.Thus，selecting dissimilar electrode metals enables the optimization of photoelectric response in MSM detectors.

Key words：metal-semiconductor-metal；aluminum nitride；UV detector；responsivity

紫外探测器广泛应用于太空探索、辐射监测、导弹制导以及紫外杀菌等领域。（剩余7899字）