VO₂（M)纳米片/PET柔性复合薄膜的制备及其光电性能

打开文本图片集

关键词：二氧化钒（ （VO2） ；柔性薄膜；水热-退火法；光学性能；电学性能中图分类号：TB34 文献标志码： ΔA 文章编号：1671-024X（2025）03-0023-08

Preparationof VO2（M） nanosheets/PET flexiblecomposite filmsand itsoptoelectronicproperties

HUANG Zhulin1，SONG Haoran1，²，LI Ming¹，HU Meng'en1，WU Liangfei'，LI Xinyang？ （1.Instituteof Solid State Physics，Hefei Instituteof Physical Sciences，Chinese AcademyofSciences，Hefei 230031， China；2.InstitutesofPhysical Science and Information Technology，Anhui University，Hefei 23060l，China；3.School of Chemistry，Tiangong University，Tianjin 3Oo387，China）

Abstract： To addressthe issue ofpoor electrical performanceof films caused by the high intrinsic resistivity of VO2 nanoparticles and poor connection between VO 2 nanoparticles during the film coating process，VO ）2（M） nanosheets were synthesized basedonahydrothermal-annealing method with optimizationof the annealing vacuum degreeand annealing temperature.A continuousand dense VO Γ2（M） film was fabricated on the surface of flexible polyethylene terephthalate（PET） by spin-coating，and the optoelectronic properties of VO Γ2（M） nanosheets/PETflexible composite films were analyzed.The results show that due to the good connection maintained by the nanosheets during dynamic bending，their in-plane two-dimensional continuous structure significantly reduces theinterfacial resistance.The VO（M） nanoshets obtained under the optimal annealing vacuum degree of 1.5 Pa at annealing temperature of 420‰ were used to prepare flexible VO2（M）/PET films，and the films have both photothermal regulationabilityand tunableresistance.Underthecondition of visible light transmittance of 41.26% ， thephotothermal modulation efficiency of 4.51% isachieved，and the change of resistance rate during the phase transition could reach 2.94×102 .It provides a material foundation for the development of flexible optoelectronic devices.

KeyWords：vanadiumdioxide;flexiblefilm;hydrothermal-annealing method;optical properties；electrical properties

M相二氧化钒（ VO2（M） ）由于其独特的金属-绝缘体相变（MIT）特性，在温度达到相变温度（ 68∘C 附近时会发生可逆相变，在晶体结构发生变化的同时也会伴随着光学、电学性能上的转变[-3]。（剩余13488字）