有源层厚度对AI-Zn-Sn-O薄膜晶体管和反相器性能的影响

打开文本图片集

中图分类号： TN321+.5 文献标识码：A doi：10.37188/CJLCD.2025-0133 CSTR：32172.14.CJLCD.2025-0133

Influence of active layer thickness on performance of Al-Zn-Sn-O thin-film transistorsandinverters

KU Laizhe 1，2 ，WANG Chao 1，2* ， GUO Liang 1，2 ， WANG Jieyang 1，2 ， CHU Xuefeng 1，2 YANG Fan 1，2 ， HAO Yunpeng1²，GAO Hansong12， ZHAO Yang12

（1. Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture ofMinistry of Education， Jilin Jianzhu University，Changchun l3O1l8，China; 2.School ofElectrical and Computer Science， Jilin Jianzhu University，Changchun l30l18，China）

Abstract：To investigate the influence of active layer thickness on the performance of aluminum zinc tin oxide（AZTO） thin-film transistors （TFTs） and inverters，and to promote their application in logic circuits，this paper prepared AZTO thin films with different thicknesses by radio frequency magnetron sputtering. These films were used as active layers to construct bottom-gate top-contact AZTO-TFT devices. The microstructure and composition of the films were characterized by field emission scanning electron microscopy（SEM） and X-ray photoelectron spectroscopy（XPS），and the electrical properties of the devices were tested.It was found that with the increase of the thickness of the AZTO active layer，the oxygen vacancy concentration graduall increased. Moderate oxygen vacancies can weaken the scatring effect of defects and impurities on carriers，reduce the transmission resistance，and thus improve the fieldeffect mobility. At the same time，the device can pass more carriers in the on-state，resulting in an increase in the source-drain curent and the on/offratio.The results showed that when the thickness of the active layer was 82nm ，the quality of the AZTO film was the best，and the device performance was optimal，with a field-effect mobility of 7.47cm2⋅V-1⋅s-1 ，a threshold voltage of 14.25V ，a subthreshold swing of 1.35V/dec ，and a current on/off ratio of 6.16×107 . The resistor-loaded inverter prepared under this optimized condition achieved a high gain of 8.8 at a supply voltage （ VDD of 25V ， and had full-swing characteristics and good noise margin，which can effectively drive the next-stage components of the logic circuit.

Keywords：thin-film transistors;AZTO;resistive-load inverters

1引言

薄膜晶体管（ThinFilmTransistor，TFT）是构建集成电路、存储器和微处理器的基本单元，也是平板显示器的关键元器件，正随着电子技术与显示技术的飞速发展而面临愈发严峻的技术挑战。（剩余16127字）