微束斑RHEED类平行束电子枪设计

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中图分类号：TN16 文献标识码：Adoi：10.37188/OPE.20253312.1876

CSTR：32169.14.OPE.20253312.1876

Design of a quasi-parallel beam electron gun with micro beam spot for Reflection High Energy Electron Diffraction

ZHAO Weixia12， SHI Lina¹，LIU Junbiao 1，2* ，YIN Bohua 1，2 ，HAN Li 1，2* （1.Research Department of Micro-nano Fabrication Technology and Inteligent Electronic Deuices ， Institute of Electrical Engineering，Chinese Academy of Sciences，Beijing 1Ool9o，China; 2. School of Electronic，Electrical and Communication Engineering，University of Chinese Academy of Sciences，Beijing 1Ooo49，China） * Corresponding author，E-mail： liujb@mail. iee. ac. cn; lihan@mail. iee. ac. cn

Abstract： In response to the application requirements of high-resolution Reflection High-Energy Electron Diffraction （RHEED） in the fields of microelectronics manufacturing and surface analysis，and considering that a long working distance，micro-beam spot size，and smallbeam half-angle electron gun are key components for achieving high-resolution RHEED detection，a micro-beam spot RHEED quasi-parallel beam electron gun was developed. The characteristics of the electron gun's electron optical system were analyzed，and a low-aberration focusing magnetic lens was designed utilizing electron optical simulation software.An experimental platform was set up to measuring the beam spot diameter， beam current，and beam half-angle performance of the developed electron gun，as well as to conduct difraction imaging tests on highly oriented pyrolytic graphite （HOPG）samples.The experimental results show that at a working distance of 500mm ，the beam spot diameter of the RHEED quasi-parallel beam electron gun is （at an acceleration voltage of 30kV ），The emission current and the beam half-angle are 144.96μA and 0.289 mrad respectively （at an acceleration voltage of 15kV ）.Clear diffraction spots which intensity corresponding to the crystal structure factors were obtained on the HOPG sample.

Key Words： electron optics；Reflection High Energy Electron Difraction （RHEED）； electron gun； qua-si-parallel electron beam

1引言

在现代半导体器件、光电子器件、量子器件等微电子制造领域，纳米级半导体材料质量的精确控制至关重要，需要对生长过程进行原位实时监测[1-3]。（剩余17490字）