等离子体光源高效率F类GaN射频功率放大器设计

打开文本图片集

关键词：等离子体光源；F类功率放大器；谐波控制；寄生参数 中图分类号：TN722；TN303；0539 文献标志码：A DOI：10.12305/j.issn.1001-506X.2025.04.01

Abstract：Aiming at the issue of reduced system luminous effcacy of the plasma light source caused by the decreased eficiency of power transistors during high-frequency operation，a high-eficiency Class F power amplifier based on Galium Nitride（GaN） high electron mobility transistor（HEMT）is designed.An output network structure combining the output matching network，parasitic compensation network，and harmonic control circuit is adopted with the consideration of parasitic parameters of the GaN transistor such as output capacitance，lead inductance，and drain-source capacitance. The output network impedance of harmonics is analyzed theoreticall，and the input and output circuits are matched and designed by simulation computation. Finally，the amplifier is fabricated and measured. The experimental results demonstrate that with an input power of 33.7dBm ，the amplifier achieves drain efficiency of 80.1% ，an output power of 240.8W ，and a gain of 20.1 dB at 915MHz ，which validates the effectiveness of the proposed design method. The developed power amplifier holds significant practical value for enhancing the luminous efficiency of plasma light sources and reducing thermal management costs.

Keywords：plasma light source；Class F power amplifier；harmonic control；parasitic parameter

0 引言

射频等离子体光源是一种无电极的高强度气体放电光源，可辐射出从紫外到红外的连续光谱，具有全光谱、长寿命和高亮度的特点，在工、农业等领域具有较好前景[1-2]。（剩余12849字）