电压源驱动下SiCMOSFET开关性能与栅极可靠性协同优化

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DOI：10. 15938/j. emc.2025.05.014

中图分类号：TM464 文献标志码：A 文章编号：1007-449X（2025）05-0144-13

Collaborative optimization of switching performance and gate reliability for SiC MOSFET under voltage-source gate driver

XIANG Pengfei¹， HAO Ruixiang²， WANG Deshun1， YOU Xiaojie³ XUE Jinhua¹， YUAN Fan² （1.State Grid Shanghai Energy Interconnection Research Institute Co.，Ltd.，Nanjing 21OOO3，China;

2.School of Electrical Engineering，Beijing Jiaotong University，Beijing 1OoO44， China;

3.Collaborative Innovation Center of Railway Traffic Safety，Beijing 1OoO44，China）

Abstract：To fully develop the switching performance and gate reliability of SiC MOSFET under the voltage source gate driver with fixed parameters，the gate parameters design scheme was optimized. The switching behavior of SiC MOSFET as the active device and the crosstalk behavior as the passive device were theoretically analyzed. The effcts of diffrent passive parameters on the switching performance and crosstalk behavior of each stage during the switching process were compared. The collaborative gate parameter optimization scheme was proposed. Then，the effect of the optimized gate parameters was verified by experiments. The optimized gate parameters can not only reduce the switching loss by up to 30% as the active device but also reduce the crosstalk peak-to-peak value by up to 60% as the passive device under the premise of the same overvoltage stress during the turn-off process. The collaborative optimization of the device switching performance and gate reliability under the voltage source gate driver was realized.

Keywords：SiC MOSFET； switching performance; overvoltage; switching loss; crosstalk

0引言

随着宽禁带半导体技术的不断发展，碳化硅金属-氧化物半导体场效应晶体管（SiCMOSFET）凭借其更高的击穿电压、更小的导通电阻、更高的热导率和更高的开关速度[1-2]，大大提高了电力电子系统性能。（剩余20566字）