基于相位切趾调制的非对称结构光栅滤波器设计与制备

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中图分类号： TN256 文献标志码：A

Design and fabrication of asymmetric grating filter based on phase apodization modulation

JIANG Wei， YUAN Shuo，YU Zhiheng，YANG Cunliang，REN Wenbo，XIA Xincheng， WANG Zhengjie， FENG Jijun （SchooolofOptical-Electricaland Computer Enginering，Universityof Shanghai forScienceand Technology，Shanghai 200093，China）

Abstract： In this work， phase apodized silicon Bragg grating filters with varying sidewall ridge width and location were investigated， while the resonance wavelength， extinction ratio and rejection bandwidth could be tuned flexibly. The grating filters with a waveguide width of 500nm and grating period of 400nm were fabricated and characterized for a proof of concept. The resonance wavelength of the device could be shifted by 4.54nm with varying the sidewall ridge width from 150 to 250nm . The corresponding rejection bandwidth could be tuned from 1.19 to 2.03nm by applying a sidewall ridge location offset from 50 to 200nm . The experimental performances coincide well with the simulation results. The presented sidewal ridge modulated apodized grating filter can be expected to have great application prospects for optical communications and semiconductorlasers.

Keywords： apodized Bragg grating; sidewall ridge; grating filter; silicon photonics

引言

基于绝缘体上硅（silicon-on-insulator，SOI）的集成光子器件因其制造工艺与互补金属氧化物半导体（complementary metal oxide semiconductor，CMOS）具有兼容性，同时对光场具有强限制性且结构紧凑，近年来引起了广泛关注[-3]。（剩余9488字）