嘧啶提高多晶硅CMP去除速率的机理研究

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关键词:化学机械抛光(CMP);多晶硅;嘧啶;去除速率

中图分类号:TN305.2

文献标识码:A

DOI:10.14106/j.cnki.1001-2028.2025.1432

引用格式:张潇, 周建伟, 杨云点, 等. 嘧啶提高多晶硅CMP去除速率的机理研究 [J]. 电子元件与材料, 2025, 44(1): 103-109.

Reference format: ZHANG Xiao, ZHOU Jianwei, YANG Yundian, et al. Mechanism of CMP removal rate improvment of polycrystalline silicon with pyrimidine [J]. Electronic Components and Materials, 2025, 44(1): 103-109.

Mechanism of CMP removal rate improvment of polycrystalline silicon

with pyrimidine

ZHANG Xiao1, ZHOU Jianwei1, YANG Yundian2, LUO Chong1, 3, LUAN Xiaodong4,

SHAO Xiangqing2, LI Jin2

( 1. School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130, China;

2.Semiconductor Technology Innovation Center(Beijing) Corporation, Beijing 100176, China; 3. Innovation and

Research Institute, Hebei University of Technology, Shijiazhuang 050299, China; 4.School of Electrical and Electronic

Engineering, Jiangsu Ocean University, Lianyungang 222000, Jiangsu Province, China)

Abstract: In order to improve the removal rate of polysilicon, the mechanism of pyrimidine on the polysilicon surface was revealed from chemical and mechanical aspects. On the one hand, X-ray photoelectron spectroscopy experiments showed that pyrimidine was adsorbed on the surface of polycrystalline silicon, by which the polarization fracture of Si-Si bond and the formation of Si-O bond was promoted, and the formation and mechanical removal rate of this soft layer on the surface of polycrystalline silicon was accelerated. On the other hand, Zeta potential and friction data showed that the pyrimidine cation produced by pyrimidine hydrolysis reduced the electrostatic repulsion between SiO2 abrasives, resulting in increasing friction between surfaces and polysilicon during CMP. In addition, the increase of temperature accelerated the rate of chemical reaction in the CMP process, thus the chemical reaction was promoted. Therefore, the addition of pyrimidine not only improves the chemical effect, but also strengthens the mechanical effect, As a result, the removal rate of polysilicon is increased by about 2.8 times.

Keywords: chemical mechanical polishing(CMP); polysilicon; pyrimidine; removal rate

集成电路在信息技术领域具有重要地位[1-2],在集成电路制造中包括许多沉积制造步骤,这些步骤会在晶圆表面留下不希望的形貌[3-4]。(剩余9829字)

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