一种高性能带隙基准源的设计

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关键词：带隙基准；高电源抑制比；低温漂；温度补偿

中图分类号：TN432

文献标识码：A

DOI：10.14106/j.cnki.1001-2028.2025.1194

引用格式：王凌翔， 张涛， 刘劲. 一种高性能带隙基准源的设计 [J]. 电子元件与材料， 2025， 44（1）： 88-94.

Reference format： WANG Lingxiang， ZHANG Tao， LIU Jin. Design of a high-performance bandgap reference source [J]. Electronic Components and Materials， 2025， 44（1）： 88-94.

Design of a high-performance bandgap reference source

WANG Lingxiang， ZHANG Tao， LIU Jin

（School of Information Science and Engineering， Wuhan University of Science and Technology， Wuhan 430000， China）

Abstract：  To address the problems of significant impact on traditional bandgap reference voltages by offset voltage of operational amplifier （op-amp） or poor noise suppression of non-op-amp bandgap reference power supplies， a high-performance bandgap reference circuit was designed to mitigate the effects of the offset voltage. By altering the connection of transistors in the design， the circuit can enhance the capabilities for suppressing offset voltage and power supply noise， which thereby improves the accuracy of the output voltage and the power supply rejection ratio （PSRR）. Meanwhile， the negative temperature higher-order term of the base current of the triode was used to compensate the low-temperature curvature of the bandgap output， which gives the bandgap reference voltage a low temperature coefficient. The HHGrace 0.18 μm BCD process was employed in the design. Simulation results give static operating current of about 6 μA and reference output voltage of 1.27 V at power supply voltage of 5 V. The temperature coefficient is 6.082×10-6/℃. The PSRR is -110.1 dB and -70.9 dB at 10 Hz and 10 kHz respectively.

Keywords：bandgap reference; high PSRR; low temperature drift; temperature compensation

带隙基准技术作为一种稳定、精确的电压基准，在电子电路设计中有着广泛的应用，它需要输出一个不受温度、工艺、电源影响的稳定电压。（剩余6148字）