具有超晶格电子减速层的氮极性InGaN基红光LED仿真研究

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中图分类号：TN312.8 文献标识码：ADOI：10.37188/CJL.20250229 CSTR：32170.14.CJL.20250229

Abstract：Thelowemission effciencyofInGaN-basedredLEDsremainsacriticalbottleneck forrealizing ful-color nitride-based RGB Micro-LED displays.Enhancing carrierconfinement and crystalline qualityin the quantum well（QW）active region is essential toimproving optical performance.Here，we propose anN-polar InGaN-based red LED featuring an n -ln0.1Ga0.9N/GaN superlattice electron deceleration layer（EDL）while removing the conventional p-AlGaNelectronblocking layer（EBL）．Numericalsimulations show thatthesuperlaticeEDLeffectively reduces electron thermal velocity and increases electron capture eficiency within the QWs.Meanwhile，the design maintains ahigh electron confinementbarrierand lowers the hole injection barrier，improving holecapture efficiency and suppressng electron overflow.Compared with areference N-polar InGaN based red LED with a p-AlGaN EBL， the proposed device achieves a 16% increase in peak internal quantum efficiency and a 32% rise in optical output power.Furthermore，eliminating the p-AlGaN EBL avoids QW crystal degradation caused by high-temperature AlGaN growth，offering a promising route toward high-efficiency InGaN-based red Micro-LEDs.

Keywords： InGaN；red light-emiting diodes；nitrogen polarity；electron deceleration layer

1引言

基于InGaN材料的Micro-LED显示技术具有高亮度、高可靠性和低功耗等优势，在可穿戴设备、虚拟现实（VR）、增强现实（AR）和可见光通信（VLC）等领域展现了广阔的应用前景-3]。（剩余10741字）