牵引变流器IGBT失效特性与寿命预测方法研究

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关键词:牵引变流器;IGBT;失效;可靠性;损耗;结温;寿命预测DOI:10.15938/j. emc.2025.06.012中图分类号:TM46 文献标志码:A 文章编号:1007-449X(2025)06-0113-11
Study on failure charactersitcs and life prediction method of IGBT in traction converter
LIU Haitao1,², LIU Xingping², KANG Lixuan², LIU Wenye², XIANG Chaoqun 1 (1.School of Traffic and Transportation Engineering,Central South University,Changsha 41OO75,China; 2. CRRC ZIC Research Institute of Electrical Technology& Material Engineering,Zhuzhou ,China)
Abstract:The IGBT is the most critical component in the traction system while also exhibiting a high failure rate. The way to utilize operational condition data from traction converters to extract IGBT working characteristics constitutes a key challenge.To enhance the reliability of traction converters during operation,an IGBT service life prediction method specifically was proposed for locomotive traction converters. Through analyzing IGBT module samples collected from several years of field operation,failure modes were identified.Accelerated lifespan testing at the converter component level under simulated field conditions was conducted,establishing an IGBT lifespan model. Subsequently,an online loss and junction temperature calculation model for traction converters was developed. By real-time acquisition of operational parameters and electrical data during line operation,this model continuously computes IGBT power losses and junction temperatures. Online rainflow counting was employed to statistically analyze thermal stresses,enabling lifespan model-based prediction of IGBT remaining service life. Finall,an IGBT lifespan prediction device for traction converters was implemented and validated through practical application on operational railway lines.The proposed method demonstrates streamlined computation processes,high efficiency,and significant engineering application value.
Keywords:traction converter; insulated gate bipolar transistor;failure;reliability; loss;junction temperatures;life predict
0引言
绝缘栅双极型晶体管(insulatedgatebipolartransistor,IGBT)具有载流密度大、饱和压降低等许多优点,已广泛应用于轨道交通、高压输电、风电、光伏等诸多关键领域中[1-4]。(剩余11550字)