纳秒脉冲激光对背照式CMOS探测器组件损伤机理研究

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中图分类号：TJ951;O348.11 文献标志码：A doi：10.37188/CO.2025-0090 CSTR：32171.14.CO.2025-0090

Abstract： To evaluate the laser-induced damage efects on visible-light imaging systems under realistic operational conditions，a detector module comprising a filter and a back-illuminated CMOS sensor was employed as the target. This study investigates the damage mechanisms induced by nanosecond pulsed lasers at wavelengths of 532nm and 1064nm . Initially， typical damage effect data of CMOS components caused by 532-nm and 1064-nm nanosecond pulsed lasers are obtained through a series of experiments. To address the limitations in observing internal thermal and mechanical responses during the experiments，a finite element simulation model was developed to analyze the interaction between the laser and the detector. The simulation enabled visualization of temperature and stress concentration phenomena that are difficult to capture through direct observation，thus providingvaluable reference data for damage thresholds.The results from both the experiments and simulations indicate that the dominant damage mechanism is coupled thermo-mechanical failure. The measured multi-stage damage thresholdswere 30.06mJ/cm2 0 38.93mJ/cm2 56.20mJ/cm2 0 and 102.17mJ/cm2 for 532nm laser irradiation， and ， ，and 137.73mJ/cm2 for 1064nm irradiation.

Key words： back-illuminated CMOS detector; nanosecond pulsed laser; laser irrdiation effects; damage mechanism

1引言

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