基于纳米压印的高分辨率和高效率量子点发光二极管

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关键词：量子点发光二极管（QLED）；纳米压印；高分辨率；电荷阻挡层中图分类号：TN312.8 文献标识码：ADOI：10.37188/CJL.20250009 CSTR：32170.14.CJL.20250009

Abstract：The current high-resolutionquantum dot light-emiting doides（QLEDs）fabricated by various quantum dots paterning techniques sufer from low eficiency，mainly dueto the passage oflarge leakage currents between pixels.To solvethis issue，ahoneycomb Poly（methyl methacrylate）（PMMA）filmwas fabricated by nanoimprinttechnique and appliedasacharge barierlayer intheQLEDlightemitinglayer.Theresultingred QLEDswitharesolutionof8467 pixel perinch（PPI）were successfullyfabricated.Due tothe good insulating propertiesofPMMA，thechargebarrerlayersuccessfully isolatestheelectron transportlayerandthehole transportlayer.Therefore，theleakagecurentofourdeviceis greatlyreducedcomparedtothedevicewithoutchargebarrerlayerpaterning，andtheexternal quantumeffciency （EQE）is greatly improved，with a maximum EQE of 15. 31% and a maximum brightness of 100274cd/m2 ：

Key Words：quantum dotlight-emitting doides（QLEDs）；nanoimprint;high-resolution;charge barrierlayer

1引言

量子点（Quantumdots，QDs）是一种纳米级别的半导体晶体，具有独特的量子限域效应，能精准调控发射光的波长和颜色纯度，由此带来了高色域、高亮度、低能耗等优势[1-3]。（剩余15077字）