AIGaAs插人结构对InAIGaAs/AIGaAs多量子阱发光特性的影响
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关键词：InAlGaAs多量子阱；插入层；金属有机化合物化学气相沉积（MOCVD）中图分类号：0482.31 文献标识码：ADOI：10.37188/CJL.20240318 CSTR：32170.14.CJL.20240318
Influence of AlGaAsInsertion Structure on Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells
ZHAO Shucun1，²，WANG Haizhu ，WANG Dengkui ，GAN Lulu ，WANG Zhensheng 1， LYUMinghui1，²，MAXiaohui1，2 （1.StateKeyLaboratoryofHigh Power SemiconductorLasers，Changchun UniversityofScienceandTechnology， Changchun130022，China; 2.Research InstituteofChongqing，Changchun UniversityofScienceand Technology，Chongqing401135，China） *CorrespondingAuthor，E-mail：whz@cust.edu.cn
Abstract：InAlGaAs/AlGaAs multiple quantum wells（MQWs） have attracted increasing attention in the near-infraredand visible light fields due to their wide spectral range，and have become an emerging research hotspot.This study uses metal organic chemical vapordeposition （MOCVD） growth technology to prepare InAlGaAs/AlGaAs multi quantum well materials.Based on the main factors and theoretical calculation methods that need to be considered when selecting the insertion layer（ISL）material，the influenceof the insertionlayer structureon the luminescence properties of quantum wels is explored. We designed and grew InAlGaAs quantum wells without an insertion layer， as wellas InAlGaAsquantum wels withAlGaAs insertion layers ofvarying thicknessesandAlcompositions.The experimentalresults show thattheintroductionof the insertionlayersignificantlyimproves theluminescenceintensityof thequantumwellAlthoughtherearelocalizedstatesinthesampleitself，thepresenceof theinsertionlayerdoesnot introduce morelocalized states，and the presenceof the insertionlayerdoes notchange thecarierrecombination mechanism in quantum wels.The research results provide importanttheoretical analysis and experimental data for the structuraloptimization and insertionlayer technologyof InAlGaAsquantum wels，indicatingthat theoptical performanceof InAlGaAsquantum wellscanbe significantly improved bydesigning theinsertionlayerreasonably.
Key Words： InAlGaAs multi quantum well; insertion layer; metal organic chemical vapor deposition（MOCVD）
1引言
在现代光学领域，InAIGaAs/AIGaAs多量子阱（MQWs）因其独特的电子和光学特性，成为了研究和应用的热点。（剩余11538字）