ZnO基器件中的负光电导特性研究

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中图分类号：0482.31 文献标识码：A DOI：10.37188/CJL.20240270 CSTR：32170.14.CJL.20240270

NegativePhotoconductivityin ZnO Devices

ZHANG Qingyi'，YANG Yuxin²，LIU Kai ，WANG Lei¹，CHEN Feng1*，XU Chunxiang （1. ， ， 3. University，21oo96，） *CorrespondingAuthors，E-mail：fengchenzql@njtech.edu.cn；xcxseu@seu.edu.cn

Abstract：Asone the best-known n-type metal oxides in third-generation semiconductor electronic devices，in particular，with its high detectionrate，highoptical gain，highsensitivity，ZnO iscommonlyusedinthe construction high-performanceultravioletphotodetectors.Thephotoconductivitybehavior zincoxidestronglydependsonitssurface interfaceproperties，the trapping detrapping photogenerated carriers bydefectstates near theconduction b.Researches have found that persistent photoconductivity even negative photoconductivity （NPC）efects can beobserved in ZnO devices duetocarierlossdefect trapping.This paperstarts from the positive photoconductivitymechanism ZnO devices， provides a detailed introduction to the negative photoconductivity phenomena observed in ZnO-based devices under different preparation conditions ambient temperatures， diffrentdriving methods，dielectric recombination， heterostructures，as well as the microscopic physicalmechanismsresponsibleforthenegativephotoconductivity effct.Underlying theNPCefectZnOcanprovideafeasible approach forconstructing highlyeficiencylogiccircuits，light-emitingdiodes，solarcells，ultra-highresolution imaging sensors.

Key words：zinc oxide；optoelectronic properties；negative photoconductivity

1引言

一般情况下，半导体材料在光照下会产生非平衡载流子，从而增加其电导率形成正光电导。（剩余26294字）