基于相变材料的零级反射调控超表面结构的研究

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中图分类号：TN253文献标志码：A

Phased-material-based metasurface structure for zero-order reflection regulation

FU Jie，BI Longkang，LIU Jiachen，HU Haifeng （School of Optical-Electrical and Computer Engineering， University of Shanghai for Science and Technology， Shanghai200093，China）

Abstract： Utilizing the reversible phase-change characteristics of Ge2Sb2Te5 ， this work designs a metasurface with tunable zero-order reflection at the wavelength in infrared band. At the wavelength of 4600nm ， the GST disk array in its amorphous state exhibits nearly zero reflection for zero-order diffraction， while in its crystalline state， the zero-order difraction reflection is approximately 55% ， achieving a modulation contrast ratio of up to 100% and significantly enabling signal on-off control. To ensure the practicality and manufacturability of this micro-nano structure， we conducted a tolerance analysis on the disk height parameter， which indicated that the error range can be within 10nm . For the disk diameter parameter， the optimal error range is within 20nm Furthermore， this structure is relatively insensitive to the disk period parameter， maintaining good performance within a period length range of 5 200 nm to 6200nm

Keywords： phase-change material; metasurface; diffraction eficiency; active manipulation

1968年，StanleyOvshinsky首次观察到一种硫族非晶半导体材料在非晶态和晶态之间具有显著的差异[1]。（剩余10382字）