MoS₂ 场效应晶体管的太赫兹 近场显微成像表征

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中图分类号：0433 文献标志码：A

Terahertz near-field microscopic imaging characterization of MoS2 field-effect transistors

HU Yuhong，LI Xingyu， JIN Zuanming， YOU Guanjun （School of Optical-Electrical and Computer Engineering， University of Shanghai for Science and Technology， Shanghai 200093，China）

Abstract： Two-dimensional transition metal dichalcogenides （TMDs） have shown great potential for applications in next-generation electronic and optoelectronic devices due to their unique electrical and optical properties. However， in-situ detection of carrier distribution at the micro- and nano-scale is insufficient. This study combined terahertz scattering scanning near-field optical microscopy （THz s-SNOM） and Kelvin probe force microscopy （KPFM） to systematically investigate the micro- and nano-scale carrier distribution and Fermi level changes in few-layer MoS2 field-effect transistors under photoexcitation and back-gate control. The results showed that THz s-SNOM could sensitively detect changes in carrier concentration in the device channel caused by external field excitation and could perform in situ imaging detection of non-uniform carrier distribution. Moreover， based on the calculation of the finite dipole model， a quantitative relationship between the terahertz near-field signal and carrier concentration was established， providing strong support for a deeper understanding of the microscopic mechanisms of carrier behavior under photoexcitation and back-gate control.

Keywords： terahertz scattering-type scanning near-field optical microscopy; Kelvin probe force microscopy ; MoS2 field-effect transistor; photoexcitation; back-gate control

随着信息技术的快速发展，传统硅基场效应晶体管（field-effecttransistor，FET）在尺寸微缩过程中面临诸多物理限制，如短沟道效应、量子隧穿效应以及功耗密度增加等，这些限制严重制约了其性能的进一步提升[1]。（剩余13572字）