氧化锌基忆阻器件研究进展

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中图分类号： O472 文献标识码： ADOI：10. 37188/CJL. 20240331 CSTR：32170. 14. CJL. 20240331

Recent Progress in ZnO-based Memristive Devices

SHI Jiajuan，SHAN Xuanyu，WANG Zhongqiang*，XU Haiyang，LIU Yichun （Key Laboratory of UV -Emitting Materials and Technology of Ministry of Education， Northeast Normal University，Changchun ，China） ∗ Corresponding Authors，E-mail：wangzq752@nenu. edu. cn；ycliu@nenu. edu. cn

Abstract：Memristors have potential in high-efficiency information processing and synaptic function simulation due to their high density，low power consumption and continuously adjustable resistance. Zinc oxide is an ideal choice for memristor with high performance due to its various preparation methods，exciton stability and biocompatibility. Herein，the recent research progress of ZnO-based memristive device is reviewed，including memristive behaviors and mechanism，the cognitive functions of synapse simulated by analog-type memristor as well as functionality and applications. We first review the switching-type and corresponding memristive mechanism，including electronic memristors and optoelectronic memristors. Then，the cognitive functions of synapse including synaptic plasticity and learning experience are introduced. Moreover，we exhibit the applications of ZnO -based memristive device in logic operation，pattern recognition and multimodal in-sensor computing. Finally，we summarize the advantages/challeng⁃ es of ZnO -based memristor and prospect the future development.

Key words：zinc oxide；memristor；optoelectronic memristor；artificial synapse

1 引 言

随着人工智能和物联网技术的快速发展，数据量的爆炸式增长对系统整体算力提出了更高的要求。（剩余35172字）