抑制碳化硅MOSFET阀值电压漂移的驱动电路

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中图分类号：TN 386 文献标志码：A 文章编号：1000-582X（2025）09-050-07

Abstract：Threshold voltagedrift in siliconcarbide metal-oxide-semiconductor field-efect transistors （MOSFETs） poses a significantchallnge to device reliability in practical applications.This paper reviews the characteristics and existing theoretical models threshold voltage drift in silicon carbide MOSFETs and proposes a novel gate driving method and circuit to mitigate this issue.The proposed circuit diferentiates thedevice’s turn-fdynamic process from the post turn-f gate voltage by introducing an intermediate voltage level，thereby effectively suppressing threshold voltage drift while retaining the benefits a negative gate turn-f voltage.An experimental platform was constructed to evaluate the proposed driving circuit.Experimental results indicate that， under the specified conditions，the new circuit reduces threshold voltage drift by 37% compared to conventional driving methods.

words： silicon carbide; metal-oxide-semiconductor field-effct transistor（MOSFET）; threshold voltage;gate driver

与传统的硅基器件相比，碳化硅金属-氧化物-半导体场效应晶体管（metal-oxide-semiconductor field-effect transistor，MOSFET）具备低开关损耗和高工作频率等优势[-3]，能满足电动汽车驱动、光伏逆变器等应用侧的需求[40]。（剩余7563字）