AAO模板上脉冲激光沉积生长的 β-Ga2O3 纳米孔的结构和光电性能

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1 Introduction

have many excellent photoelectric performance, such as a wide bgap ~4.9eV[1] ,a breakdown field 8MV⋅cm-1[2] ,a high temperature stabili(剩余18680字)

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